mct5210/ mct5211 document number 83657 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 1 i179004 i179004 1 2 3 6 5 4 b c e a c nc pb p b -free e3 optocoupler, phototransistor ou tput, low input current, with base connection features ? saturation ctr - mct5211, > 100 % at i f = 1.6 ma high isolation voltage, 5300 v rms lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code h or j, double protection bsi iec60950 iec60965 din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1 csa 93751 description the mct521/5211 are optocouplers with a high effi- ciency aigaas led optically coupled to a npn pho- totransistor. the high performance led makes operation at low input currents practical. the coupler is housed in a six pin dip package. isolation test volt- age is 5300 v rms . because these parts have guaranteed ctrs at one and three ma, they are ideally suitable for interfacing from cmos to ttl or lsttl to ttl. they are also ideal for telecommunicati ons applications such as ring or off-hook detection. order information for additional information on t he available options refer to option information. absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can cause pe rmanent damage to the device. func tional operation of the device is not implied at these or any other condition s in excess of those given in the operatio nal sections of this document. exposure to absolute maximum rating for extended periods of t he time can adversely affect reliability. input part remarks mct5210 ctr > 70 %, dip-6 mct5211 ctr > 110 %, dip-6 MCT5211-X007 ctr > 110 %, smd-6 (option 7) mct5211-x009 ctr > 110 %, smd-6 (option 9) parameter test condition symbol value unit peak reverse voltage v r 6.0 v forward continuous current i f 40 ma power dissipation p diss 75 mw derate linearly from 25 c 1.0 mw/c
www.vishay.com 2 document number 83657 rev. 1.4, 26-oct-04 mct5210/ mct5211 vishay semiconductors output coupler electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing require ments. typical values are c haracteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output parameter test condition symbol value unit collector-emitter breakdown voltage bv ceo 30 v emitter-collector breakdown voltage bv eco 7.0 v collector-base breakdown voltage bv cbo 70 v power dissipation p diss 200 mw derate linearly from 25 c 2.6 mw/c parameter test condition symbol value unit isolation test voltage v iso 5300 v rms total package dissipation (led + detector) p tot 260 mw derate linearly from 25 c 3.5 mw/c leakage path 7mm clearance path 7mm comparative tracking index per din iec 112/vde 0303, part1 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? operating temperature t amb - 55 to + 100 c storage temperature t stg - 55 to + 150 c parameter test condition symbol min ty p. max unit forward voltage i f = 5.0 ma v f 1.2 1.5 v reverse voltage i r = 10 av r 6.0 v parameter test condition symbol min ty p. max unit dc forward current gain v ce = 5.0 v, i c = 100 a hfe 100 200 collector-emitter breakdown voltage i c = 100 abv ceo 30 v emitter-collector breakdown voltage i e = 100 abv eco 7.0 v collector-base breakdown voltage i e = 10 abv cbo 70 v collector-emitter leakage current v ce = 10 v i ceo 5.0 100 na
mct5210/ mct5211 document number 83657 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 3 coupler 0 - 70 c current transfer ratio switching characteristics parameter test condition part symbol min ty p. max unit saturation voltage i f = 3.0 ma, i c = 1.8 ma mct5210 v cesat 0.25 0.4 v i f = 1.6 ma, i c = 1.6 ma mct5211 v cesat 0.25 0.4 v parameter test condition part symbol min ty p. max unit current transfer ratio (collector-emitter saturated) v ce = 0.4 v, i f = 3.0 ma mct5210 ctr cesat 60 120 % v ce = 0.4 v, i f = 1.6 ma mct5211 ctr cesat 100 200 % v ce = 0.4 v, i f = 1.0 ma mct5211 ctr cesat 75 150 % current transfer ratio v ce = 5.0 ma, i f = 3.0 ma mct5210 ctr 70 150 % v ce = 5.0 ma, i f = 1.6 ma mct5211 ctr 150 300 % v ce = 5.0 ma, i f = 1.0 ma mct5211 ctr 110 225 % current transfer ratio (collector-base) v ce = 4.3 v, i f = 3.0 ma mct5210 ctr cb 0.2 0.4 % v ce = 4.3 v, i f = 1.6 ma mct5211 ctr cb 0.3 0.6 % v ce = 4.3 v, i f = 1.0 ma mct5211 ctr cb 0.25 0.5 % parameter test condition part symbol min ty p. max unit propagation delay-high to low r l = 330 ? , i f = 3.0 ma, v cc = 5.0 v mct5210 t phl 10 s r l = 750 ? , i f = 1.6 ma, v cc = 5.0 v mct5211 t phl 20 s r l = 1.5 k ? , i f = 1.0 ma, v cc = 5.0 v mct5211 t phl 40 s propagation delay-ow to high r l = 330 ? , i f = 3.0 ma, v cc = 5.0 v mct5210 t plh 10 s propagation delay-low to high r l = 750 ? , i f = 1.6 ma, v cc = 5.0 v mct5211 t plh 20 s r l = 1.5 k ? , i f = 1.0 ma, v cc = 5.0 v mct5211 t plh 40 s
www.vishay.com 4 document number 83657 rev. 1.4, 26-oct-04 mct5210/ mct5211 vishay semiconductors typical characteri stics (tamb = 25 c unless otherwise specified) figure 1. switching schematic imct5210_06 input v out v cc =5v r l fi 2.sitcim imct5210_03 i f t r =1.5 v v o t d t s t f t phl t plh v th fi 3.fct.fvt fi 4.ledfct.fvt imct5210_01 1.4 1.32 1.2 1.1 1.0 0 5 10 15 20 25 30 35 vf - led forward voltage - v if - led current - ma imct5210_02 1.4 1.3 1.2 1.1 1.0 .1 1 10 100 vf - led forward voltage - v if - led current - ma figure 5.collectorbasep hotocurrents.ledcurrent figure 6.photocurrents.ledcurrent imct5210_04 40 35 30 25 20 15 10 5 0 0 50 100 150 200 250 300 if - led current - ma icb - photocurrent - a imct5210_05 100 10 1 .1 .1 1 10 100 1000 if - led current - ma icb - photocurrent - a
mct5210/ mct5211 document number 83657 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 5 figure 7. collector base ctr vs. led current figure 8. collector base ctr vs. led current figure 9. ctr vs. led current imct5210_07 35 30 25 20 15 10 5 0 0.0 0.2 0.4 0.6 0.8 1.0 if - led current - ma ctrcb - collector base - ctr - % imct5210_08 100 10 1 .1 0.0 0.2 0.4 0.6 0.8 1.0 if - led current - ma ctrcb - collector base - ctr - % imct5210_09 100 10 1 .1 100 200 300 400 500 600 700 if - led current - ma ratio - % vce 10 v 5v 2v 1v 0.4 v figure 10.collectorcurrents.ledcurrent figure 11.collectorcurrents.ledcurrent figure 12.transistorcurrentgains.basecurrent imct5210_10 25 20 15 10 5 0 0 10 20 30 40 50 60 70 80 if - led current - ma ice - collector current - ma vce 10 v 5v 2v 1v 0.4 v imct5210_11 100 10 1 .1 .1 1 10 100 if - led current - ma ice - collector current - ma vce 10 v 5v 2v 1v 0.4 v imct5210_12 1000 100 10 1 .1 100 200 300 400 500 600 700 800 ib - base current - a hfe - dc current gain - (ice/ib) vce 10 v 5v 2v 1v 0.4 v
www.vishay.com 6 document number 83657 rev. 1.4, 26-oct-04 mct5210/ mct5211 vishay semiconductors figure 13. transfer curve figure 14. transfer curve figure 15. propagation delay vs. base emitter resistor imct5210_13 1000 100 10 1 .1 .1 1 10 100 500 600 700 800 icb - photocurrent - a if - led current - ma hfe - transistor gain vce =10 v, ice = icb x hfe imct5210_14 1000 100 10 1 .1 .1 1 10 100 100 200 300 400 500 600 700 if - led current - ma hfe - transistor gain vce = 0.4 v ice = icb x hfe icb - photocurrent - a imct5210_15 10 7 10 6 10 5 10 20 30 40 50 60 70 propagation delay - s if=1ma rl=10k vth = 1.5 v tphl tplh vce=5v rbe - base emitter resistor - figure 16.propagationdelays.baseemitterresistor figure 17.propagationdelays.baseemitterresistor imct5210_16 10 7 10 6 10 5 0 10 20 30 40 50 rbe - base emitter resistor - propagation delay - s if = 1.6 ma rl= 4.7 k vth = 1.5 v tphl tplh vce = 5 v imct5210_17 10 7 10 6 10 5 10 4 0 5 10 15 20 25 30 35 40 rbe - base emitter resistor - probagation delay - s if=3ma rl=3k vth = 1.5 v vce=5v tphl tplh
mct5210/ mct5211 document number 83657 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 7 package dimensions in inches (mm) i178004 .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3C9 .300C.347 (7.62C8.81) 4 typ. iso method a .315 (8.0) min. .300 (7.62) typ . .180 (4.6) .160 (4.1) .331 (8.4) min. .406 (10.3) max. .028 (0.7) min. option 7 18494 min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15 max. option 9
www.vishay.com 8 document number 83657 rev. 1.4, 26-oct-04 mct5210/ mct5211 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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